METHOD AND DEVICE FOR REMOVING A REVERSIBLE ASSEMBLED BUILDING UNIT FROM A SUPPORTING SUBSTRATE

专利摘要:
New disassembly methods and apparatus for separating temporary, permanent or semi-permanently bonded substrates and articles made from these methods and apparatus are provided. The methods include disassembling a package wafer from a carrier wafer or substrate that has been strongly bonded only at its outer peripheries. The edgeband joints are chemically, mechanically, acoustically or thermally softened, dissolved or destroyed to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the manufacturing process. A clamp (41) for facilitating the separation of the bonded substrates is also provided.
公开号:AT14714U1
申请号:TGM524/2010U
申请日:2010-08-24
公开日:2016-04-15
发明作者:
申请人:Brewer Science Inc；
IPC主号:

专利说明:

description
BACKGROUND OF THE INVENTION FIELD OF THE INVENTION
[0001] The present invention relates generally to novel methods for temporarily debonding wafers and devices that can remove a package wafer from a carrier substrate after wafer thinning and other backside processing.
DESCRIPTION OF THE PRIOR ART
Integrated circuits, power semiconductors, light emitting diodes, photonic circuits, microelectromechanical systems (MEMS), embedded passive arrays, encapsulation interposers and a host of other based on silicon and compound semiconductors micro devices are produced together in arrays on wafer substrates whose Diameter of 1 to 12 inches is enough. The devices are then separated into individual devices or chips which are encapsulated to allow a practical connection to the macroscopic environment, for example, by connection to a printed circuit board. It has become increasingly popular to construct the package encapsulation on or around the chip while still being part of the wafer array. This practice, which is referred to as wafer-level packaging, reduces the overall packaging cost and allows for higher interconnect density between the device and its microelectronic environment than with more traditional encapsulants, which typically have outer dimensions many times larger than the actual device.
Until recently, termination concepts were generally limited to two dimensions, meaning that the electrical connections between the device and the corresponding plate or encapsulation surface to which it is mounted are all arranged in a horizontal or xy plane were. The microelectronics industry has now recognized that significant increases in device block density and corresponding reductions in signal delays (due to shortening the distance between electrical connection points) can be achieved by vertically stacking and packaging devices. H. in the z direction. Two general requirements for the device packaging are: (1) thinning of the device in the direction through the wafer from the back side, and (2) subsequent formation of electrical connections through the wafer, which are generally silicon through-contacts (through-silicon Vias) or "TSV" and ends on the back of the module. For that matter, semiconductor package thinning has now become a standard practice, even though packages are not encapsulated in a rack configuration that facilitates heat dissipation and allows much smaller form factor to be achieved with compact electronic products, such as cell phones.
There is an increasing interest in thinning semiconductor devices down to less than 100 microns in order to reduce their profiles, particularly when stacking them or the corresponding encapsulants in which they are located, and the formation of backside electrical connections to simplify the building blocks. Silicon wafers used in mass production of integrated circuits typically have a diameter of 200 or 300 mm and have a thickness of about 750 microns through the wafer. Without thinning, it would be nearly impossible to form electrical backside connections connected to circuits on the front by routing the connections through the wafer. Highly efficient thinning processes for semiconductor grade silicon and compound semiconductors based on mechanical grinding (back grinding) and polishing as well as chemical etching are now in commercial use. These methods allow the device wafer thickness to be reduced to less than 100 microns in a few minutes while maintaining precise thickness uniformity control across multiple wafers.
Device wafers thinned to less than 100 microns, and especially those thinned to less than 60 microns, are extremely fragile and must be supported throughout their dimensions to prevent cracking or cracking. Various wafer bars and chucks have been developed for transporting thin-wafer chip wafers, however, there is still the problem, such as the wafers during the loopback and TSV formation processes, of the steps of chemical mechanical polishing (CMP), lithography, etching, deposition , Annealing and cleaning include support, since these steps expose the package wafer high thermal and mechanical loads while it is being thinned or thinned. An increasingly popular approach to handling ultra-thin wafers involves mounting the full-thickness package wafer face-down on a rigid support with a polymeric adhesive. It is then thinned and processed from the back. The fully processed wafer is then removed from the carrier by thermal, thermomechanical or chemical processes or detackified after the backside processing has been completed.
Common substrates include silicon (eg, a package wafer blank), soda lime glass, borosilicate glass, sapphire, and various metals and ceramics. The carriers may be square or rectangular, but are more often round and sized to conform to the package wafer so that the bonded assembly can be handled in conventional processing tools and cassettes. Occasionally the carriers are perforated to accelerate the debonding process when a liquid chemical is used to dissolve or decompose the polymeric adhesive as a means of separation.
The polymeric adhesives used to temporarily bond (bond) the wafers are typically spin-coated or spray-coated from solution or lamination as a dry film tape. Spin-on or spray-applied adhesives are becoming increasingly preferred because they form coatings with greater uniformity than ribbons can provide. Greater thickness uniformity translates into greater control of thickness uniformity across multiple wafers after thinning. The polymeric adhesives show greater bondability to the package wafer and carrier.
The polymeric adhesive can be spin-coated onto the package wafer, carrier, or both, depending on the thickness and flatness of the coating required. The coated wafer is fired to remove the entire coating solvent from the layer of polymeric adhesive. The coated wafer and carrier are then contacted for bonding with a heated mechanical press. Sufficient temperature and pressure are used to cause the adhesive to flow into and fill the structural features of the package wafer and to achieve intimate contact with all areas of the surfaces of the package wafer and the carrier.
Detachment of a building block wafer from the backing after backside processing is typically carried out by one of the following ways: (1) Chemically - the bonded wafer stack is immersed or sprayed in a solvent or chemical to dissolve the polymeric adhesive or decompose.
(2) Photochemical decomposition - The bonded wafer stack is irradiated with a light source through a light-transmissive support to photochemically decompose the adhesive boundary layer adjacent to the support. The carrier may then be separated from the stack and the remainder of the polymeric adhesive removed from the package wafer while held in a jig.
[0012] (3) Thermomechanical - The bonded wafer stack is heated above the softening temperature of the polymeric adhesive and the package wafer is then pushed or pulled away from the carrier while being supported by a jig to hold the entire wafer.
(4) Thermal decomposition - The bonded wafer stack is heated above the decomposition temperature of the polymeric adhesive, causing it to evaporate and lose adhesion to the package wafer and the carrier.
Each of these Entklebungsverfahren has disadvantages that severely limit its use in a Produduktionsumgebung. For example, chemical debonding by dissolving the polymeric adhesive is a slow process because the solvent must diffuse over large distances through the viscous polymer medium to effect separation. That is, the solvent must be removed from the edge of the bonded substrates or from a perforation in the carrier to the local area of the adhesive. In both cases, the minimum distance required for solvent diffusion and penetration is at least 3 -5 mm and can be much more, even with perforations to increase solvent contact with the adhesive layer. Treatment times of several hours, even at elevated temperatures (> 60 ° C), are usually required for debonding to take place, meaning that the wafer throughput will be low.
The photochemical decomposition is also a slow process because the entire bonded substrate can not be exposed simultaneously. Instead, the exposing light source, which is usually a laser with a beam cross section of just a few millimeters, must each be focused on a small area to provide sufficient energy to cause the degradation of the adhesive layer of the adhesive. The beam then continuously scans (or scans) the entire substrate to detackify the entire surface, resulting in long detack times.
Although a thermo-mechanical (TM) Entklebung usually can be carried out in a few minutes, it has other limitations that can reduce the building block yield. Backside bonded wafer processes often include working temperatures in excess of 200 ° C or even 300 ° C. The polymeric adhesives used for TM release must not degrade or excessively soften at or near the working temperature; otherwise the deinking would take place prematurely. As a result, the adhesives are normally designed to sufficiently soften at 20-50 ° C above the working temperature for detackification to occur. The high temperature required for Entklebung imposes considerable burden on the bonded pair as a result of thermal expansion. At the same time, the high mechanical force required to move the package wafer away from the carrier by a sliding, lifting or rotating motion creates additional stress that can cause the package wafer to break or cause damage in the microscopic circuitry of individual packages , which leads to failure of the device and a reduction in yield.
Detachment by thermal decomposition (TZ) is also susceptible to breakage of the wafer. Gases are produced when the polymeric adhesive is decomposed and these gases are trapped between the device wafer and the carrier before most of the adhesive has been removed. The accumulation of trapped gases can cause bubbles or cracks to form or even crack on the thin building block wafer. A further problem of TZ detackification is that polymer degradation is often accompanied by the formation of stale, carbonated residues which can not be removed from the building block by conventional purification techniques.
[0018] The limitations of these prior art detackification methods for polymeric adhesives have created a need for new methods of handling supported thin wafers that provide high wafer throughput and the likelihood of breakage of the device wafer and internal damage to the wafer Reduce or eliminate blocks.
BRIEF SUMMARY OF THE INVENTION
The present invention generally provides a new ring clamp for separating bonded substrates. The ring clamp has a planar body with a substantially circular profile and a central opening. The body comprises an annular inner side wall; an annular outer side wall; an upper surface extending between the inner side wall and the outer side wall; a wafer engagement surface extending outwardly from the inner sidewall in substantially parallel alignment with the upper surface, the wafer engagement surface terminating at a point in the body that is spaced from the outer sidewall; and an inwardly extending annular ridge that slopes inwardly from the point and away from the wafer engaging surface. The wafer engaging surface and the annular ridge together form an annular wafer receiving groove.
The present invention is also directed to the combination of a clamp having a planar body with a substantially circular profile comprising an annular wafer receiving groove and a planar substrate having an outermost edge defining the periphery of the substrate, at least a part of the circumference is received in the Waferaufnahmenut.
In addition, a novel method for temporary bonding (bonding) is generally described. The method includes providing a stack comprising a first substrate and a second substrate adhered to the first substrate, and separating the first substrate and the second substrate using a peel-off motion.
The first substrate has a back surface and a device surface, wherein the Bau¬steinfläche has a peripheral region and a central region. The second substrate has a support surface, a back surface, and an outermost edge defining the periphery of the second substrate, the support surface having a peripheral region and a central region. The first and second substrates are separated by exerting a force on a portion of the periphery of the second substrate, causing the second substrate to be bent at an angle away from the stack, thereby separating the first substrate and the second substrate according to the method.
In addition, a method of forming a temporary wafer bonding structure is generally described. The method comprises providing a first substrate having a front surface and a back surface; forming a bonding layer on the front surface of the first substrate; providing a second substrate having a front surface and a back surface, the front surface having a surface modified region, an unmodified region and an optional mask adjacent to the unmodified region; and contacting the front surface of the second substrate with the adhesive layer on the first substrate to thereby form the temporary adhesive structure. Advantageously, the bond coat and the surface modified region of the second substrate comprise a low adhesion interface therebetween.
The present invention also provides a disc-shaped clamp for separating bonded substrates. The clamp has a solid, planar body with a generally circular profile. The body includes an annular outer sidewall defining the outer diameter of the body; an upper surface extending across the entire diameter between the outer side wall; a wafer engagement surface extending between a point in the body spaced from the outer sidewall; and an inwardly extending annular ridge tapering inwardly from the point and away from the wafer engagement surface. Advantageously, the wafer engaging surface and the annular ridge collectively form an annular wafer receiving groove.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic sectional view of a wafer stack; FIG. Fig. 2 is a schematic drawing showing an alternative embodiment for bonding substrates; FIG. 3 is a schematic drawing showing another alternative embodiment for bonding substrates; FIG. FIG. 4 is a schematic drawing showing still another alternative embodiment for bonding substrates; FIG. Fig. 5 (a) is a plan view of a ring clamp for separating bonded substrates according to an embodiment of the invention; Fig. 5 (b) is a plan view of a disk-shaped clamp for separating bonded substrates according to an embodiment of the invention; Fig. 6 (a) is a fragmentary sectional view of a ring clamp device taken along section line 6 (a) in Fig. 5 (a) for separating bonded substrates according to an embodiment of the invention; FIG. 6 (b) is an enlarged sectional view of a portion of the ring clamp of FIG
Fig. 6 (a), which detects a wafer of a bonded stack according to an embodiment of the invention; Fig. 6 (c) is a fragmentary sectional view of a disc-shaped terminal device taken along section line 6 (c) in Fig. 5 (b) for separating bonded substrates according to an embodiment of the invention; Fig. 7 is a schematic cross-sectional view of an example serving to illustrate an application purpose in which the ring clamp and a press-down jig are used to separate the bonded substrates; Fig. 8 is a schematic cross-sectional view of an example serving to illustrate an application in which the ring clamp and an adhesive-covered jig are used to separate the bonded substrates; 9 is a schematic cross-sectional view of an example which serves to illustrate an application purpose in which the separation process according to the invention is represented; [0036] FIG. Fig. 10 is a schematic sectional view of an example serving to illustrate an application purpose in which a flexible chuck and a vacuum chuck are used to separate the bonded substrates; Fig. 11 is a schematic sectional view of an example serving for illustrating an application purpose in which a flexible chuck and an adhesive-covered chuck are used to separate the bonded substrates; Fig. 12 is a schematic cross-sectional view of an example which serves to illustrate an application purpose in which an adhesive sheet and an underpressure jig are used for separating the bonded substrates; and [0040] FIG. 13 is a schematic cross-sectional view of an example serving to illustrate an application purpose in which an adhesive film and a tensioning device covered with an adhesive film for separating the bonded ones
Substrates are used.
DETAILED DESCRIPTION OF THE INVENTION
More specifically, the present invention provides novel disassembly methods and apparatus for separating temporarily, permanently, or semi-permanently bonded substrates, such as in a wafer stack, using a stripping motion. As used herein, all references refer to " subtract ", " subtracted " or a " pull-off motion " to the continuous detachment of the bonded surface of the substrate that is being separated beginning with the outermost edge of a portion of the periphery of the substrate and proceeding transversely along the substrate surface to the opposite edge / side of the substrate. As used herein, references to " a part " the circumference of a portion of the circumference that is less than the entire circumference (and preferably less than about 1/2 or less than about 1/4 of the circumference) and may include more than one location about the circumference of the substrate when peeled off (preferably 4 or less sites, more preferably 2 or less sites and even more preferably a site). Generally, to pull the substrates away from one another, an upward force is applied to a portion of the circumference of the substrate that causes the substrate to bend and deflect at an angle from the stack, thereby first separating the substrate at that portion of the outermost edge from the stack which is followed by the continuous separation of the substrate from this initial edge to the opposite edge of the substrate until the entire substrate surface is separated (ie, peeled) from the stack. Various methods and devices, including a novel ring clamp, are described in detail below to facilitate this stripping movement, along with several suitable methods for forming the temporarily, permanently or semi-permanently bonded substrates used in the invention.
Fig. 1 illustrates one embodiment of a stack 10 of two reversibly bonded wafers. Suitable methods for forming such a stack are described in US Pat. No. 2009/0218560 filed on Jan. 23, 2009, which is incorporated herein by reference in its entirety to the extent that it is not inconsistent with the present application. It will be appreciated that the order of assembly or application of the components to form the wafer stack 10 will be different, as disclosed in US patent application publication no. 2009/0218560, and may be performed in any order suitable for obtaining the stack 10 as shown in FIG.
The stacked structure 10 includes a first substrate 12. In this embodiment, the first substrate 12 is a package wafer. That is, the substrate 12 has a front or Bau¬steinfläche 14, a rear surface 16 and an outermost edge 17, which defines the circumference (the outline) of the substrate. Although the substrate 12 may be of any shape, it would typically have a circular profile, although wafer fats may also be used (circular wafers having one or more straight edges on the outer periphery of the wafer). Regardless of the shape, the front or package surface 14 has a peripheral region 18 and a central region 20. The peripheral region 18 preferably has a width of from about 0.05 mm to about 10 mm, more preferably from about 0.5 mm to about 5 mm, and even more preferably from about 1 mm to about 2.5 mm.
Preferred first substrates 12 include package wafers whose package surfaces include arrays of devices selected from the group consisting of integrated circuits, MEMS, microsensors, power semiconductors, light emitting diodes, photonic circuits, interposers, embedded passive devices, and other micro devices based on or consisting of silicon and other semiconductor materials such as silicon germanium, gallium arsenide and gallium nitride. The surfaces of these building blocks usually include
Structures made of one or more of the following materials: silicon, polysilicon, silicon dioxide, silicon (oxy) nitride, metals (eg, copper, aluminum, gold, tungsten, tantalum), low dielectric constant dielectrics, polymer dielectrics and various metal nitrides and silicides. The package surface 13 may also include raised structures, such as solder bumps and metal bars and columns.
The stack 10 also includes a second substrate 22. In this particular embodiment, the second substrate 22 is a carrier substrate. The second substrate 22 includes a support surface 24 and a back surface 26 and an outer edge 27 that defines the periphery of the substrate 22. As was the case with the first substrate 12, the second substrate 22 may have any shape, although it would generally have a circular profile and / or at least one flat. Further, the second substrate 22 would preferably be sized to be approximately the same size as the first substrate 12 so that the outer edge 27 of the second substrate 22 will lie along substantially the same plane as the outer edge 17 of the first substrate 12. Regardless of the shape, the support surface 24 has a peripheral region 28 and a central region 30. The peripheral region 28 preferably has a width of about 0.05 mm to about 10 mm, more preferably about 0.5 mm to about 5 mm, and even more preferably about 1 mm to about 2.5 mm.
Preferred second substrates 22 comprise a material selected from the group consisting of silicon, sapphire, quartz, metals (e.g., aluminum, copper, steel), and various glasses and ceramics. The substrate 22 may also include other materials deposited on its surface 24. For example, silicon nitride may be deposited on a silicon wafer to modify the bonding characteristics of the surface 24.
In the intermediate layer between the first substrate 12 and the second substrate 22 is a layer 32 of filler, which adjoins the module surface 14 and the support surface 24, respectively. The thickness of the layer 32 (measured at its thickest point) will depend on the height of the topography on the first substrate 12 and may be between about 5 pm and about 150 pm. In some embodiments, the preferred thickness ranges from about 5 pm to about 100 pm, more preferably from about 5 pm to about 50 pm, and even more preferably from about 10 pm to about 30 pm.
In forming the stack 10, the filler may be applied to either the substrate 12 or the substrate 22 by any conventional means, including spin coating, solution casting (e.g., meniscus coating, roller coating), inkjet coating, and spray coating become. It is preferred that the fill layer 32 be deposited to have a thickness (measured at its thickest point) of from about 5 pm to about 100 pm, more preferably from about 5 pm to about 50 pm, and even more preferably from about 10 pm to about 30 pm. When spin coated, the material-forming filler layer 32 is typically spin-coated at speeds of from about 100 rpm to about 500 rpm for a period of about 15 seconds to about 300 seconds. The layer would then be near or above the boiling point of the solvent (s) present in the fill layer 32 (e.g., from about 80 ° C to about 250 ° C for a period of about Calcined for 1 minute to about 15 minutes to reduce the residual solvent content in the filler layer 32 to less than about 1% by weight.
The filling layer 32 is typically made of a material comprising monomers, oligomers and / or polymers dispersed or dissolved in a solvent system. When the fill layer 32 is applied by spin coating, it is preferred that the solids content of this material be from about 1 wt% to about 50 wt%, more preferably from about 5 wt% to about 40 wt%. and more preferably from about 10% to about 30% by weight. Examples of suitable monomers, oligomers and / or polymers include those selected from the group consisting of cyclic olefin polymers and
Copolymers and amorphous fluoropolymers containing high atomic fluorine content (greater than about 30% by weight), such as fluorinated siloxane polymers, fluorinated ethylene / propylene copolymers are selected, with polymers having pendant perfluoroalkoxy groups and copolymers of tetrafluoroethylene and 2,2-bistrifluoromethyl-4 , 5-difluoro-1,3-dioxole are particularly preferred. It will be appreciated that the bond strength of these materials will depend on their specific chemical structures and the coating and firing conditions used to apply them.
Examples of suitable solvent systems for cyclic olefin polymers and copolymers include solvents selected from the group consisting of aliphatic solvents such as hexane, decane, dodecane and dodecene; alkyl-substituted aromatic solvents such as mesitylene; and mixtures thereof are selected. Suitable solvents for amorphous fluoropolymers include fluorocarbon solvents sold, for example, by 3M Corporation under the designation FLUORINERT®.
In another embodiment, the filling layer could also be made of a polymeric material containing dispersed nanoparticles. Suitable nanoparticles include those selected from the group consisting of alumina, ceria, titania, silica, zirconia, graphite, and mixtures thereof.
The material from which the filler layer 32 is made should remain stable at temperatures of from about 150 ° C to about 350 ° C, and preferably from about 200 ° C to about 300 ° C. In addition, this material should be subject to the chemical exposure conditions stable, which are found in the particular operations performed on the back to which it will be exposed. The filler layer 32 should not degrade under these conditions (i.e., a weight loss of less than about 1%) or otherwise lose its mechanical integrity, such as by melting. The fill layer 32 should also not show outgassing, as this could cause bubbles to form on the thin die wafer or the wafers to deform, especially when exposed to high vacuum processes, such as during the deposition of CVD dielectric layers.
In this embodiment, the filling layer 32 preferably does not form strong adhesive bonds, whereby the separation is facilitated at a later time. Desirably, desirable materials include amorphous polymeric materials that: (1) have low surface free energies; (2) are not tacky, it is known that they do not strongly adhere to glass, silicon and metal surfaces (i.e., would typically have very low concentrations of hydroxyl or carboxylic acid groups, and preferably would not have such groups); (3) may be cast from solution or formed into a thin film for lamination; (4) flow under typical bonding conditions to fill the surface topography of the package wafer, forming a void-free adhesive layer between the substrates; and (5) do not crack, flow, or redistribute under mechanical stress encountered during backside machining, even when the processing is performed at high temperatures or under high vacuum conditions. As used herein, low surface free energy is defined as a polymeric material or surface that has a contact angle with the wafer of at least about 90 ° and a critical surface tension of less than about 40 dynes / cm, preferably less than about 30 dynes / cm and more from about 12 dynes / cm to about 25 dynes / cm as determined by contact angle measurements.
Low bond strength refers to polymeric materials or surfaces that are tack-repellent or that can be stripped from a substrate with only light hand pressure as would be used to detackle a sticky note. Thus, all materials having an adhesive strength of less than about 50 psig, preferably less than about 35 psig, and more preferably from about 1 psig to about 30 psig, would be desirable for use as a filler layer 32. As used herein, the adhesive strength is determined by ASTM D4541 / D7234. Examples of suitable polymeric materials exhibiting the above properties include some cyclic olefin polymers and copolymers sold under the name APEL® of
Mitsui, TOPAS® from Ticona and ZEONOR® from Zeon, and solvent-soluble fluoropolymers such as CYTOP® polymers sold by Asahi Glass and TEF-LON® AF polymers sold by DuPont. The bond strength of these materials will depend on the coating and firing conditions used to apply them.
As shown in Figure 1, the outermost portion of the fill layer 32 has been removed and only abuts the central portions 20 and 30 of the package face 14 and the carrier surface 24. This can be accomplished by any means, including removal of the desired amount without damaging the first substrate 12, including dissolving the outermost part with a solvent known to be a good solvent for the material of which the filler layer 32 is made. Examples of such solvents include those selected from the group consisting of aliphatic solvents (eg, hexane, decane, dodecane, and dodecene), fluorocarbon solvents, and mixtures thereof. After edge removal, fill layer 32 has an outermost edge 33 spaced by a distance "D" from the plane defined by outer edge 17 of first substrate 12. "D" is typically from about 0.05 mm to about 10 mm, more preferably from about 0.5 mm to about 5 mm, and even more preferably from about 1 mm to about 2.5 mm. The contact with the edge removal solvent may be maintained for a sufficient period of time to dissolve the desired amount of fill layer 32 to achieve the desired distance "D"; However, typical contact times would be from about 5 seconds to about 60 seconds.
The outermost part of the filling layer 32 may be removed before or after the substrates 12, 22 are bonded face to face. If it is removed beforehand, the stack 10 is formed by contacting the second substrate 22 with the Füll¬ layer 32, wherein a cavity between the peripheral region 18 of the first Sub¬strats 12 and the peripheral region 28 of the second substrate 22 is left. This contact is preferably performed under heat and pressure to cause the material of which the filler layer 32 is made to spread substantially uniformly along the front surface 14 of the first substrate 12 as well as along the support surface 24 of the second substrate 22. The pressure and heat are adjusted based on the chemical composition of the fill layer 32 and are selected so that the distance "D" remains substantially the same after compression of the second substrate 22 with the first substrate 12 and before such compression. That is, the fill layer 32 will experience little to no flow into the cavity where the layer was removed, and the distance "D" after compression will be within about 10% of the distance "D" prior to compression. Typical temperatures during this step will range from about 150 ° C to about 375 ° C, and preferably from about 160 ° C to about 350 ° C, with typical pressures ranging from about 1000 N to about 5000 N, and preferably from about 2000 N to about 4000 N. , When the outermost portion of the filling layer 32 is removed face to face after bonding the substrates 12, 22, the stack 10 is formed by contacting the second substrate 22 with the filling layer 32, under heat and pressure, as described above. The outermost part of the filling layer 32 is then removed, leaving a cavity between the peripheral region 18 of the first substrate 12 and the peripheral region 28 of the second substrate 22.
Alternatively, the filler layer 32 is provided as a laminate which is adhered to the first substrate 12 under heat, pressure and / or vacuum as required for the particular material to ensure that there are no voids between the substrate Fill layer 32 and the front surface 14 are. The laminate is cut in advance into the proper shape (e.g., circular) or mechanically adjusted after application so as to create the appropriate distance "D" as discussed above.
Around the periphery of the outermost edge 33 of the filling layer 32, after the outermost part of the filling layer 32 has been removed, a binding material forms an edge-bonding compound 34 between the first substrate 12 and the second substrate 22, which has a thickness - sen that corresponds to that described above with respect to the filling layer 32. Edge banding compound 34 will be bounded on the outer periphery of first substrate 12 and second substrate 22 (i.e., adjacent peripheral areas 18 and 28 of package face 14 and support surface 24, respectively). In cases where the substrate has a circular profile, the edge glue joint 34 will be annular. Consequently, in this embodiment, there is an uneven distribution of material across the substrates 12, 22.
As with the removal of the outermost part of the filling layer 32, the edge adhesive joint 34 can in turn be applied before or after the substrates 12, 22 are glued together face to face. For example, if the filler layer 32 is composed of a low bond strength material, such as TEFLON® AF, it is advantageous to apply the edge bond after application and partial removal of the filler layer 32, but prior to contacting the second substrate 22 with the filler layer 32, to bond the substrates. This alternative arrangement is particularly advantageous because the coated substrate 12 could be fabricated to provide the first substrate 12 as a support wafer. This substrate 12 could then be provided to an end user who would bond a package wafer to the coated substrate 12 and subject the resulting stack 10 to further processing. Thus, the end user would be provided with an adhesive-ready carrier for added convenience, thereby eliminating processing steps for the end user. When the fill layer 32 and the edge bond 34 are both applied prior to bonding the substrates 12, 22, the fill layer 32 and the edge bond 34 may be applied to the same substrate as described above. Alternatively, the fill layer 32 may be deposited and then the outermost portion removed from a substrate (eg, the first substrate 12) while the edge adhesive bond 34 is applied to the peripheral region 28 of another substrate (eg, the second substrate 22) can, as by Rota¬tionsbeschichtung. The substrates 12, 22 can then be glued surface-to-surface. The edge bonding material may be incorporated by a variety of means. For example, when applied after the substrates are adhered surface-to-surface, a suitable mechanism is the use of a needle, syringe or tip dispenser to force the material into the cavity between the peripheral region 18 of the first substrate 12 and the peripheral region 28 of the second substrate 22 while the structure 10 is slowly rotated until the peripheral areas are filled with the bonding material, thereby forming the edge bonding joint 34. The edge glue joint 34 may also be applied by capillary filling of the cavity 44 or by chemical vapor deposition. In another application method, liquid (100% solids or solution) edge-bonding material may be spin-coated onto the edge of the substrate wafer before contacting the substrates 12 and 22 using an edge-wrap baffle system. Such a system is described by Dalvi-Mahotra et al., "Use of silane-based primer on silicon wafersto enhance adhesion of edge-protective coatings during wet etching: Application of the TALONWrap ™ process", Proceedings of SPIE, Vol. 6462, 2007, p. 64620B-1 - 64620B- 7, incorporated herein by reference. Edge banding compound 34 is then subjected to the appropriate curing or curing process (eg, UV cure).
The materials from which edge banding 34 is made should be able to form a strong bond with substrates 12 and 22. Any materials having a bond strength of greater than about 50 psig, preferably from about 80 psig to about 250 psig, and more preferably from about 100 psig to about 150 psig, would be desirable for use as the edge bond 34. In addition, the bond strength of edge banding 34 is at least about 0.5 psig, preferably at least about 20 psig, and more preferably from about 50 psig to about 250 psig higher than the adhesive strength of fill layer 32. Further, the material from which edge banding 34 is required The edge adhesive joint 34 should remain stable at temperatures of from about 150 ° C to about 350 ° C, and preferably from about 200 ° C to about 300 ° C. In addition, this should be
Material under the chemical exposure conditions encountered in the particular reverse operations performed to which the bonded stack will be exposed. Edge banding 34 should not degrade (i.e., lose weight less than about 1%) at the back side processing temperatures described above or otherwise lose its mechanical integrity. Nor should these materials release volatile compounds which could cause blistering of thin building block wafers, especially when exposed to high vacuum processes, such as the deposition of CVD dielectric layers.
Preferred edge seal or edge bonding materials include commercial compositions for temporary bonding of wafers, such as the WaferBOND® materials (available from Brewer Science Inc., Rolla, Mo., USA), some commercial photoresist compositions with other resins and polymers showing high adhesion to semiconductor materials, glasses and metals. Particularly preferred are: (1) high solids UV-curable resin systems such as reactive epoxy resins and acrylic resins; (2) related thermosetting resin systems such as two-part epoxy resin and silicone adhesives; (3) thermoplastic acrylic, styrene, vinyl halide (non-fluorinated) and vinyl ester polymers and copolymers, together with polyamides, polyimides, polysulfones, polyethersulfones and polyurethanes applied from the melt or as solvent coatings fired after application to dry and thicken the peripheral regions 18 and 28; and (4) cyclic olefins, polyolefin rubbers (eg, polyisobutylene) and tackifier resins on hydrocarbon base. As was the case with the materials used to form the fill layer 32, it will be appreciated that the bond strength of edge bonding materials also depends on their specific chemical structures and the coating and firing conditions used to raise them will depend.
In an alternative embodiment, only the edge glue joint 34 could be used between the first substrate 12 and the second substrate 22. That is, instead of the fillers described above, the layer represented by fill layer 32 in Figure 1 could be blank (i.e., air). Thus, nothing but air would be adjacent to the central region 20 of the first substrate 12 and the central region 30 of the second substrate 22.
Referring to FIG. 2, in another method of forming the stack 10, a surface modification may be applied to change the bonding strength interface between the bonding material and the first substrate 12 or the second substrate 22, instead of a filler with low bonding strength in the intermediate layer. Referring to Figs. 2 (a) - (d), wherein identical parts are numbered as in Fig. 1, a protective composition is applied to the peripheral region 28 of the support surface 24 of the second substrate 22 to form a layer of a mask 36, the the peripheral area 28 adjacent. If the second substrate 22 has a circular profile, the mask 36 thus has the shape of a ring. A variety of suitable compositions may be used to form the mask 36. The mask 36 should be resistant to the solvent used during surface modification and other subsequent processing, but is preferably made from a composition that can be easily removed or dissolved from the support surface 24 without degrading the surface treatment or the second Substrate 22 to adversely affect. The mask 36 is typically made of a material comprising monomers, oligomers, and / or polymers dispersed or dissolved in a solvent system. Examples of suitable monomers, oligomers and / or polymers include those selected from the group consisting of epoxy resins, polyamides, ethers, esters, cyclic olefin polymers and copolymers, amorphous fluoropolymers, and combinations thereof. Preferred compositions are selected from the group consisting of edge-bonding materials as described above (e.g., commercial compositions for temporary bonding of wafers such as WaferBOND®), filler materials as described above, and photoresist compositions (e.g. 8, 2002, Microchem, Newton, MA, USA). The mask 36 preferably has a width of from about 0.05 mm to about 10 mm, more preferably from about 0.5 mm to about 5 mm, and even more preferably from about 1 mm to about 2.5 mm. The mask preferably has a thickness of from about 0.05 μιη to about 5 gm, more preferably from about 0.5 gm to about 2.5 gm, and even more preferably from about 0.5 gm to about 1 gm.
As shown in FIG. 2 (b), the region on the carrier surface 24 of the second substrate 22, which is not coated with the mask 36, is then chemically modified to form a surface with low binding (FIG. ie a non-adherent surface or a surface to which a filling or bonding material can not strongly adhere). Preferably, the central area 30 of the support surface 24 is the area exposed to the surface modification to provide a low adhesion interface when brought into contact with the bonding material. For proper surface modification, chemical treatment of the substrate surface 24 may include a hydrophobic solution that can react with the substrate surface 24 to reduce its surface free energy as described above. More preferably, hydrophobic organosilane solutions are used. Particularly preferred surface modifying compositions 38 are selected from the group consisting of (fluoro) alkylsilane (e.g., perfluoroalkyltrichlorosilane), (fluoro) alkyl phosphonate, isocyanate silane, acrylate silane, and combinations thereof. The surface modifying composition 38 may be applied by any suitable method, such as spin coating, at a speed of at least about 1000 rpm for about 100 seconds (and preferably about 2000 rpm for about 60 seconds). Thus, the surface modifying composition 38 may be diluted with a solvent such as FLUORINERT® (3M Corp.) prior to being applied to the substrate surface 24. The second substrate 22 may then be fired to evaporate the solvent at about 50 ° C to about 150 ° C for about 30 seconds to about 5 minutes (and preferably at about 100 ° C for about 1 minute). Substrate 22 may then be rinsed with additional solvent and again fired to evaporate the solvent as described above to remove unreacted surface modifying solution 38 and rinse surface modification solution 38 from mask 36, as shown in FIG 2 (c). It is preferable that the mask 36 does not react with the surface modification solution in this embodiment, so that the mask 36 is not rendered "adhesion-resistant" by the surface modification. The advantage of the surface modification approach is that the intermediate layer can be selected for any combination of properties (eg, thickness, solubility, heat resistance), except for providing an adhesion-preventing interface or a low-adhesion interface with the substrate as described above with reference to FIG. Another advantage is that a uniform bonding composition can be used for the entire intermediate layer instead of a separate filler 32 and an edge adhesive joint 34.
[0065] The surface 14 of the first substrate 12 (the package wafer) is then coated with a bonding composition to create a bond coat 40 on and over the surface 14, and the first substrate 12 and the treated second substrate 22 are then surface-to-surface. Glued surface as shown in Fig. 2 (d), wherein the second substrate 22 is now on the stack 10. This contact is preferably performed under heat and pressure to cause the material of which the bond coat 40 is made to distribute substantially evenly along the front surface 14 of the first substrate 12 and along the support surface 24 of the second substrate 22. More Preferably, the substrates 12, 22 are adhered under vacuum and in a heated, pressurized chamber (preferably at from about 100 to about 300 ° C for about 1 to 10 minutes, and more preferably from about 100 to about 200 ° C for about 2 to 5 minutes). In this embodiment, the mask 36 is not removed face to face prior to bonding the two substrates 12, 22 together. Thus, it is preferred that the protective material used to form the mask 36 be made of the same material or a similar or compatible material as the materials from which the adhesive layer 40 is made, so that when the substrates 12, 22 are bonded as described above Mask 36 and the bonding materials together to form a uniform bond coat 40, as shown in FIG. 2 (d) is shown. The thickness of the bond layer 40 will depend on the height of the topography on the package wafer 12 and may be between about 5 pm and about 150 pm. In some embodiments, the preferred thickness ranges from about 5 pm to about 100 pm, more preferably from about 5 pm to about 50 pm, and even more preferably from about 10 pm to about 30 pm.
The materials from which the bond coat 40 is made should form a strong bond with the substrates 12 and 22 except when treated with the surface modifying composition 38. Suitable bonding materials include any material having an adhesive strength of greater than about 50 psig, preferably from about 80 psig to about 250 psig, and more preferably from about 100 psig to about 150 psig, for use as the edge adhesive joint 34 is desirable. Furthermore, the material from which the bond coat 40 is made must meet the requirements of backside processing for heat and chemical resistance. The adhesive layer 40 should remain stable at temperatures of from about 150 ° C to about 350 ° C, and preferably from about 200 ° C to about 300 ° C. In addition, this material should be stable under the chemical exposure conditions encountered in the backside operations to which the bonded stack will be exposed. Bonding layer 40 should not degrade at the backside processing temperatures described above (ie, a decrease in weight) less than about 1%) or otherwise lose its mechanical integrity. Nor should these materials release volatile compounds which could cause blistering of thin building block wafers, especially when subjected to high vacuum processes such as the deposition of CVD dielectric layers.
Preferred bonding materials include commercial compositions for temporary bonding of wafers, such as the WaferBOND® materials (available from Brewer Science Inc., Rolla, Mo., USA), some commercial photoresist compositions, along with other resins and polymers containing a show high adhesion to Halbleitermate¬rialien, glasses and metals. Particularly preferred are: (1) high solids UV-curable resin systems such as reactive epoxy resins and acrylic resins; (2) related thermosetting resin systems which cure or crosslink when heated, such as two part epoxy and silicone adhesives, cyclic olefin polymers and copolymers with thermal catalyst initiators, and CYCLOTENE® (Dow Chemical); (3) thermoplastic acrylic, styrene, vinyl halide (non-fluorochemical) and vinyl ester polymers and copolymers, together with polyamides, polyimides, polysulfones, polyethersulfones and polyurethanes applied from the melt or as solution coatings which are fired after being applied for drying; and (4) cyclic olefins, polyolefin rubbers (e.g., polyisobutylene), and hydrocarbon-based tackifier resins. Thermosetting materials also require the use of a crosslinking agent and optionally a catalyst in the system, as well as a step of inducing crosslinking, as described in more detail herein. The above materials are also useful for forming the mask 36 in this embodiment.
In the resulting stack 10, the bonding layer 40 contacts the modified central area 30 and the unmodified peripheral area 28 on the support surface 24. Advantageously, the bond interface between the bond layer 40 and the central area 30 of the support surface 24 is weaker than the bond interface between the bond layers 40 and 40 Therefore, in the adhesive layer 40, regions of high adhesive strength " B " and areas with low bond strength " b " educated. The transition between the regions of high adhesion "B" and the regions of low adhesion "B". Along the interface between the bond coat 40 and the support surface 24, the initial location at which the two substrates 12,22 will begin to peel off during separation will be indicated. It will be appreciated that the width of the mask 36 during processing will vary depending on the desired size and location of the high adhesive areas " B " Likewise, particularly when the mask 36 is made from photoresist compositions or other structurable layers, the mask 36 could also be applied as a uniform layer over the support surface 23 and then in a variety of ways (such as forming a grid, lines, etc.) , Shapes, etc.) are structured and developed. An adjoining surface modification would result in the treatment of a structured, non-adherent surface. Accordingly, the location and manner of separation of the substrates 12 and 22 can be adjusted to the user's desired specifications.
Referring to Fig. 3, another alternative example serving to illustrate an application purpose is shown, with identical parts numbered as in Fig. 2. As shown in this figure, the substrates 12, 22, the mask 36 and the bonding layer 40 are made of the same materials as described above with reference to Fig. 2, except that in step (c) of 3, the mask 35 is removed from the carrier surface 24 exposing the peripheral region 28 of the carrier surface 24, which remains untreated with the surface modifying composition 38. The mask 36 may be removed by solvent dissolution, acid or base wet processing or plasma etching. The first substrate 12 and the treated second substrate 22 are then bonded face to face with the second substrate, which is now shown in FIG. 3 (d) above. This contact is preferably conducted under heat and pressure to cause the material of which the bond coat 40 is made to spread substantially uniformly along the front surface 14 of the first substrate 12 as well as along the support surface 24 of the second substrate 22 such that the adhesive layer 40 contacts the modified central region 30 and the unmodified peripheral region 28 on the support surface 24, as previously described. The mask 36 in this embodiment can also be structured as described above, followed by the surface modification and the removal of the mask 36, which results in the treatment of a structured, adhesion-repellent surface as soon as the mask 36 has been removed. Because this mask 36 is removed, the mask 36 can be made of any material suitable for masking and need not be compatible with the materials used to form the bond coat 40. Likewise, the mask 36 may be reactive with the surface modification composition 38 as long as it can still be removed from the support surface 24 to expose the untreated peripheral region 28 of the second substrate 22.
FIG. 4 illustrates another example of forming a stack 10. An adhesive composition is applied to the surface 24 of the second substrate 22 to form a bond coat 40. The bonding layer 40 can be made of any suitable material, as previously described with reference to FIG. 2, although thermosetting materials are particularly preferred. The thickness of the bond layer 40 will depend on the height of the topography on the first substrate 12 and may be between about 5 pm and about 150 pm. In some embodiments, the preferred thickness ranges from about 5 pm to about 100 pm, more preferably from about 5 pm to about 50 pm, and even more preferably from about 10 pm to about 30 pm. A layer of filler material is applied to the bonding layer 40 to form a filling layer 32, as shown in Fig. 2 (b). The filling layer 32 has a thickness of about 0.05 μm to about 5 μm, preferably from about 0.5 μm to about 2.5 μm, and more preferably from about 0.5 μm to about 1 μm. In this embodiment, the filler layer 32 does not form strong adhesive bonds and is preferably made of a low bond strength material as described above with respect to FIG. 1. Thus, suitable materials for forming the filler layer 32 in this embodiment include compositions having the properties described above including cyclic olefin polymers and copolymers marketed under the names APEL® by Mitsui, TOPAS® by Ticona and ZEONOR® by Zeon, and solvent-soluble fluoropolymers such as CYTOP® polymers marketed by Asahi Glass and TEFLON® AF polymers sold by DuPont. However, it will be appreciated that the bonding strength of these materials will depend on the coating and firing conditions used to apply them.
Next, as shown in Fig. 4 (c), the filling layer 32 of the outermost part is removed. This can be accomplished by any means that permits the removal of the desired amount without damaging the integrity of the bond coat 40, including dissolving the outermost part with a solvent known to be a good solvent for the material the filling layer 32 is made. Examples of such solvents include those selected from the group consisting of aliphatic solvents (e.g., hexane, decane, dodecane, and dodecene), fluorocarbon solvents, and mixtures thereof. After edge removal, fill layer 32 has an outermost edge 33 spaced by a distance "D" from the plane defined by the outermost edge 27 of second substrate 22. "D" is typically from about 0.05 mm to about 10 mm, preferably from about 0.5 mm to about 5 mm, and more preferably from about 1 mm to about 2.5 mm. Contact with the edge removal solvent may be maintained for a sufficient amount of time to dissolve the desired amount of fill layer 32 to achieve the desired "D" distance; However, typical contact times would be from about 5 seconds to about 120 seconds.
Referring to FIG. 4 (d), the second substrate 22 is bonded face to face with the first substrate 12. This contact is preferably carried out under heat and pressure to cause the material from which the bond coat 40 is made to flow around the fill layer 32 and into the space left by the edge removal operation, so that the peripheral region 18 of the front surface 14 of the first substrate 12 is uniformly contacted. More preferably, the substrates 12, 22 are adhered under vacuum and in a heated, pressurized chamber (preferably at from about 100 to about 300 ° C for about 1 to 10 minutes, and more preferably from about 100 to about 200 ° C for about 2 to 5 minutes). In this embodiment, the bond coat 40 can be made from a composition that cures or crosslinks upon heating, such as an epoxy-based photoresist composition. Thus, at a viewpoint, after contacting the first substrate 12 and the second substrate 22, the stack 10 is exposed to radiation (ie, light) under heat and pressure to initiate crosslinking (curing) of the layer 40, followed by firing after exposure (Post ExposureBake, PEB) at a temperature from about 75 ° C to about 300 ° C, more preferably from about 100 ° C to about 250 ° C, and more preferably from about 100 ° C to about 175 ° C for a Zeitraum from about 15 seconds to about 120 seconds follows. Thus, the materials used to form the bond coat 40 in this embodiment will include a crosslinking agent and optionally a catalyst in the system.
Advantageously, the bonding interface between the central region 20 of the device surface 14 and the filler layer 32 is weaker than the bonding interface between the bonding layer 40 and the peripheral region 18 of the device surface 14. Therefore, regions of high adhesion and regions of low adhesion "b" The transition between the regions of high adhesion B and the regions of low adhesion b along the interface between the front surface 14 of the first substrate 12 and the adhesive layer 40 and the filler layer 32 indicates the initial location at which the two substrates 12, 22 will begin to abzie¬hen during separation from each other.
With reference to the stacks formed in Figs. 1, 2 (d), 3 (d) and 4 (d), the first substrate 12 in the stack 10 can be handled and extended safely at this stage Methods that would otherwise have damaged the first substrate 12 without being bonded to the second substrate 22. Thus, the first substrate 12 of the structure 10 may be securely subjected to backside processing, such as loopback, CMP, etching, deposition of metals or dielectric layers, patterning (e.g.
Photolithography by etching), passivation, annealing, and combinations thereof, without separation of the substrates 12 and 22, and without infiltration of any chemical substances encountered during these subsequent processing steps into the central regions 20 and 30 between the substrates 12 and 22.
Advantageously, the dried or cured layers of the stacked structure 10 in this and all embodiments will have a number of very desirable properties. For example, during heating and / or vacuum deposition processes, the layers will show low outgassing. That is, firing at about 150-300 ° C for up to about 60 minutes results in a film thickness change of the filler layer 32 and the edge adhesive joint 34 of less than about 5%, preferably less than about 2%, and more preferably less than about 1.0%. , The dried layers may also be heated to temperatures of up to about 350 ° C, preferably up to about 320 ° C, and more preferably up to about 300 ° C, without chemical reactions taking place in the layer. In some embodiments, the layers may be in the bonded state Also exposed to polar solvents (e.g., N-methyl-2-pyrrolidone) at a temperature of about 80 ° C for about 15 minutes without reacting or dissolving.
The bond integrity of the edge bond 34 or bond coat 40 can be preserved even upon exposure to an acid or base. That is, a dried edge bond 34 having a thickness of about 15 microns may be placed in an acidic medium (e.g., concentrated sulfuric acid) at room temperature for about 10 minutes or in an alkaline medium (e.g., 30 weight percent KOH ) are immersed at about 85 ° C for about 45 minutes while preserving the bond integrity. The bonding integrity can be evaluated by using a glass substrate and visually observing the edge bond 34 through the glass substrate to check for blisters, voids, etc.
Once the desired processing has been completed, the first substrate 12 and the second substrate 22 can be easily separated. Although the edge glue joint 34 or the peripheral region (corresponding to "B") of the bond coat 40 can be kept intact prior to the separation of the substrates 12, 22, the edge bond 34 or the peripheral region "B" of the bond coat 40 is first chemically, mechanically, acoustically, or thermally softened dissolved or destroyed to allow the wafers to be easily separated with very little force at about room temperature (~ 23 ° C). For example, the edge glue joint 34 or the peripheral portion of the bond coat 40 is first dissolved using a solvent or other chemical. This may be achieved by dipping in the solvent or by spraying a jet of the solvent onto the edge adhesive compound 34 or the peripheral region of the bond coat 40 to dissolve it. The use of thermoplastic materials is particularly desirable when dissolution with a solvent is to be used to destroy the edge adhesive joint 34 or the bond coat 40. Solvents that could typically be used in this removal process include those selected from the group consisting of ethyl lactate, cyclohexanone, N-methyl pyrrolidone, aliphatic solvents (e.g., hexane, decane, dodecane, and dodecene) and mixtures thereof are. Edge banding compound 34 or the peripheral region of the bond coat is preferably removed with the solvent at least in part (about 50%) and more preferably substantially (about 85%) removed.
The substrates 12 and 22 may also be separated by first of all the continuity of the edge adhesive joint 34 or the peripheral region of the bond layer using laser ablation, plasma etching, water jet purging or other high energy techniques, the edge bond 34 or the peripheral region of the bond layer 40 effectively etches or decomposes, mechanically breaks or destroys. It is also convenient to first separate the edge adhesive joint 34 or the peripheral region of the bonding layer 40 with a crack or break or to saw through or cut or split the edge bond 34 or the peripheral region of the bond layer 40 by an equivalent means.
Regardless of which of the above means is employed, then a slight mechanical force (eg, finger pressure, slight lever application) may be exerted to completely separate the substrates 12 and 22. Advantageously, the first substrate 12 and the second substrate 22 may be separated using a peel-off motion such that one of the substrates 12 or 22 is peeled off the stack. To initiate stripping, a force is applied to one part (eg, less than 1/2, preferably less than 1/3, more preferably less than 1/4, and even more preferably less than 1/10) of the part Scope of the substrate to be separated exerted. As discussed above, the location of the initial separation will depend on the site of transition between the high adhesion regions "B" and the low adhesion regions along the interface between the bond layer and / or the fill layer and the substrate surface. As the initial part of the circumference of the substrate is raised or pushed further upwards, the location of the bending of the substrate gradually moves along the interface between the substrate surface and the bond coat and / or the fill layer from the initial part of the circumference where the force is applied until finally the entire surface of the substrate has been separated from the stack. To facilitate separation, the stack may be simultaneously moved away (i.e., lowered down) while the force is applied to the substrate to be separated, preferably in an upward direction. The amount of force applied to the periphery of the substrate will vary, but will preferably be between about 0.25 Newton to about 100 Newton, more preferably from about 2 Newton to about 75 Newton, and even more preferably from about 5 Newton to about 50 Newton, as on Part of the circumference of the substrate measured on which the force is applied.
In a preferred method, an annular clamp 41 in the form of a split ring clamp is provided for separating the substrates 12,22. Referring to Fig. 5 (a), the ring clamp 41 has a planar body 42 having a substantially circular profile defining the periphery and a central opening 43. Preferably, the ring clamp body 42 is unitarily formed with a gap at a location to form bifurcated ends 44a, 44b, preferably in the form of shoulders. The term "uniformly formed" as used herein is interchangeable with the term "integrally formed" and means that such unitary parts are "integral" and can not be attached or detached from one another in a separate step, however are formed from a single piece of material. Suitable materials for the ring body 42 are selected from the group consisting of metals, ceramics, polymers, composites, and combinations thereof. The ends 44a, 44b are either moved away from one another (i.e., spread apart) in the open configuration or drawn toward each other in the closed configuration to compressively engage the wafer to be separated from the stack 10. That is, the free ends 44a, 44b are arranged to be clamped in close relation so that the ring fits around the circumferential length (circumference) of the wafer. Preferably, the ends 44a, 44b are constrained to each other in the closed configuration, but remain unconnected (ie, a gap between the ends remains and the ring forms a discontinuous circular body), although the ends 44a, 44b can be connected to provide a gapless, to make continuous shape. In use, the contraction or disengagement of the ends 44a, 44b causes the central opening 43 to be reduced or enlarged to effect the clamping action of the body 42 about the wafer to be removed from the stack, and to accommodate Wafers of various sizes while maintaining uniform pressure over the entire circumferential length (the entire circumference) of the wafer as it is detected by the ring. In another embodiment, the ring clamp 41 could be a multi-part system, with each part being uniformly formed. The parts are brought together to form the ring around the peripheral length of the wafer which senses it, as described above. The multi-part system may comprise from about 2 to about 25 parts, more preferably from about 2 to about 10 parts, even more preferably from about 2 to about 4 parts, and most preferably about 2 parts. Advantageously, regardless of the embodiment, the ring clamp 41 does not have to grasp the entire 360 ° of the circumference of the substrate to effectively separate the stack. Rather, the ring clamp body 42 is suitable for use with wafer fiat having one or more flat edges, as described in more detail below.
Referring to Fig. 6 (a), the ring clamp body 42 has an annular inner side wall 45 defining the inner diameter "d" of the annular body 42 and an annular outer side wall 46 defining the outer diameter of the annular body 42. The inner diameter "d" ranges from about 10 mm to about 400 mm, preferably from about 75 mm to about 350 mm, and more preferably from about 100 mm to about 275 mm. The outside diameter "D" ranges from about 25 mm to about 550 mm, preferably from about 100 mm to about 400 mm, and more preferably from about 250 mm to about 350 mm. It will be appreciated, however, that the ring body 42 may be virtually any size, depending on the size of the wafer to be separated. The inner side wall 45 and the outer side wall 46 are substantially parallel to each other. The ring body 42 has a width "W", such as from the inside wall 45 to the outside wall 46, from about 0.1 to about 50 mm, preferably from about 0.5 to about 25 mm, and more preferably from about 1 to about 12 mm up. The inner sidewall 45 also has a thickness "t" ranging from about 0.1 to about 15 mm, more preferably from about 0.5 to about 10 mm, and even more preferably from about 1 to about 5 mm. Outer side wall 46 has a thickness "T" ranging from about 0.15 to about 16 mm, more preferably from about 0.55 to about 11 mm, and even more preferably from about 1.5 to about 6 mm. The t: T ratio will preferably be from about 1:20 to about 1: 1, more preferably from about 1:10 to about 1: 5, and even more preferably about 2: 3.
Annular body 42 further includes an upper surface 48 extending between inner sidewall 45 and outer sidewall 46 and a wafer engagement surface 50 extending outwardly from inner sidewall 45 in substantially parallel alignment with upper surface 48; on. The wafer engagement surface 50 does not extend all the way to the outside wall 46, but terminates at a point "p" spaced from the outside edge wall 46 by a width "w", as measured from the point "p" to the outside wall 46 , The width w ranges from about 0.01 to about 45 mm, preferably from about 0.1 to about 20 mm, and more preferably from about 0.5 to about 10 mm. The ring body 42 has an inwardly extending annular ridge 52 which slopes inwardly and downwardly from the point "p" of the wafer engaging surface 50 and away from the plane defined by the upper surface 48 and the wafer engaging surface 50 a free edge 54 ends. The ridge 52 has an inclined shoulder surface 56 extending between the free edge 54 and the point "p" at which the wafer engaging surface 50 terminates in the ring body 42. Thus, the outwardly extending wafer engaging surface 50 and the inwardly and downwardly extending annular ridge 52 together form an annular wafer receiving groove 58 at an acute angle (Θ). Preferably, the groove angle (Θ) as measured from the wafer engaging surface to the shoulder surface is from about 10 ° to about 90 °, preferably from about 20 ° to about 75 °, and more preferably from about 30 ° to about 60 °. The annular ridge 52 also has a bottom surface 60 which preferably extends parallel to the planes defined by the wafer engagement surface 50 and the top surface. The ring body 42 also has a bottom surface 62 extending downwardly and away from of the plane defined by the upper surface 48, extending from the outer side wall 46 and the lower surface 60 of the annular ridge 52.
The free edge 54 of the annular ridge 52 preferably does not extend inwardly past the plane "P" defined by the inside sidewall 45. Thus, the annular ridge 52 and the groove 58 are outwardly offset from the inner side wall 45 so that when a wafer is received in the groove 58, the backside surface 26 of the wafer is caught by the wafer engaging surface 50 of the ring body 42 and the outer edge 27 and the perip The region 28 of the wafer is detected by the shoulder 56 and the free edge 54 of the ridge 52. This is shown in Fig. 6 (b) using the second substrate 22 as an example. The ring clamp 42 is then moved to the closed configuration, whereby the
Wafer 22 is held in the groove 58. More specifically, at least a portion of the circumference of the wafer 22 is received in the groove 58. When the wafer edge 27 is rounded or chamfered, the shoulder 56 and the free edge 54 detect the rounded corner of the wafer created by the wafer edge 27 and the peripheral region 28 labeled "x".
In an alternative embodiment of the invention, as shown in Fig. 5 (b), the clamp body 42 has no central opening 43. Rather, the cavity corresponding to the central opening 43 shown in Figs. 5 (a) and 6 (a) is solid and the terminal body 42 is disk-shaped. Accordingly, as shown in Figs. 5 (b) and 6 (c), the upper surface 48 extends over the entire diameter "D" between the outer side wall 46, and the wafer engagement surface 50 extends over the entire length between point "p".
Referring to Figure 7, in use, the stack 10 is placed on a chuck 64 which can provide an adequate hold down force to secure the first substrate 12 during subsequent steps. The tensioning device 64 could use vacuum force, electrostatic force, magnetic force, mechanical force, physical restraint, or any other suitable means that would provide a suitable hold down force while providing support to the first substrate 12 without damage cause. The ring clamp body 42 is placed around the periphery of the second substrate 22 so that the substrate 22 is received in the wafer receiving groove 58, as described above. The free ends 44a, 44b of the body 42 are pulled toward each other to compressively grip the periphery of the second substrate 22 (not shown). The ring clamp 41 preferably provides uniform pressure over the entire circumference of the second substrate 22, except in embodiments in which the second substrate 22 is a wafer flat. In this case, a part of the peripheral length (i.e., the flat side) of the wafer is not caught by the clamp. As noted above, the ring clamp need not detect the entire 360 ° of the circumference (the circumferential length) of the substrate to effectively separate the stack 10. Rather, it is convenient that the ring clamp only detect about 1 ° of the circumference of the substrate 22 for effective separation. More particularly, the ring clamp preferably captures at least about 25 ° of the substrate circumference, more preferably from about 45 ° to about 90 °, and even more preferably from about 90 ° to about 180 ° of substrate circumference. When a wafer Fiat is used, the flat Edge from the initial wiping point path so that the flat edge is the last part of the wafer which is peeled off during the untangling step.
It is important that the ring terminal body 42, when clamped, engage only the second substrate 22 and make no contact with the first substrate 12. Thus, when the first substrate 12 is a building wafer, the inventive method and apparatus enable effective separation of the stack 10 without exerting any mechanical force or stress on the building block wafer, thereby minimizing the risk of breakage or damage to the building block. As discussed above, the edge bonding compound 34 or the peripheral region of the bonding layer 40 is preferably removed in part or substantially prior to the separation of the substrates. However, the edge glue joint 34 or the peripheral portion of the bond coat 40 need not be removed. Thus, when the edge adhesive joint 34 or the peripheral portion of the adhesive layer 40 is present, the ring clamp body may also make contact with the edge adhesive joint 34 or the peripheral region of the bonding layer 40.
In an alternative example, which serves to illustrate an application purpose, which is shown in FIG. 8, a layer of an adhesive film or adhesive tape 66 is applied an¬ grenzend to the clamping device 64 to the first substrate 12 at the Spannvor¬ direction 64. The stack 10 is then arranged adjacent to the adhesive film layer 66. Suitable materials for the adhesive sheet or ribbon layer 66 include those which have relatively low adhesion, no adhesive transfer, and the ability to stretch without cracking. Preferably, the adhesive sheet layer 66 is formed using singulation tape, which is typically used in the art to temporarily support building block substrates for handling purposes during low temperature operations. Here, the adhesive sheet layer 66 provides additional support to the first substrate 12 after separation, particularly when the package substrate 12 has built-up filigree features or has been thinned. Preferred singulating tapes are selected from the group consisting of polyvinyl chloride, polyethylene, polyolefin and combinations thereof. The adhesive sheet layer 66 preferably has a thickness of from about 0.01 to about 3 mm, more preferably from about 0.05 to about 1 mm, and even more preferably from about 0.07 to about 0.2 mm.
Regardless of the embodiment, with reference to Figure 9, a force (preferably upwardly directed) is reduced to only a portion (eg, less than 1/2, preferably less than 1/3, more preferably less than 1) / 4 and even more preferably less than 1/10) of the circumference of the ring clamp body 42 during the separation, whereby the corresponding part of the circumference of the second substrate 22 defined by the edge 27 in a direction away from the The amount of force applied to the edge of the substrate will vary, but is preferably between about 0.25 Newton to about 100 Newton, more preferably about 2 Newton to about 75 Newton and more preferably from about 5 Newton to about 50 Newton as measured at the edge of the substrate. As a result, it will be appreciated that the location of the initial separation shown in FIG. 9 is exemplary only and that the actual location of the first separation is shown in FIG Separation will depend on the materials and surface treatments (if applicable) used to form the stack, as described above, including the location and / or pattern of modification of the adhesion-repellent surface or low-strength bonding layers contained in the stack. As previously discussed, the location of the adhesive failure that will determine the initial location of the separation may be modified as desired by the end user.
Furthermore, the ring body 42 is preferably flexible, so that when the part of the circumference of the ring clamp 41 is raised, the body 42 is flexed in that location with the force and bends, preferably upwards. This deflection in the annulus 42 causes the corresponding portion of the circumference of the substrate 22 to also flex or deflect at an angle away from the stack 10. That is, as shown in FIG. 9, when a part of the circumference of the ring body 42 is lifted, the opposite part of the ring body 42 preferably remains substantially stationary and not down on the stack 10 in response to the other part being lifted suppressed. In order to further facilitate the separation, the tensioning device 64, which secures the first substrate 12, may be gradually moved away from the second substrate 22 during the separation and is preferably lowered downwards. The lowering of the tensioning device 64 may be performed simultaneously with the application of force to the ring clamp 42. Alternatively, the force on the second substrate 22 and the resulting stripping motion is caused by the movement of the tensioning device 64 away from the second substrate 22, which is held substantially stationary while the stack 10 is being pulled away.
Advantageously, and in contrast to prior art bonding processes, the separation need not overcome strong adhesive bonds between the fill layer 32, the edge glue joint 34 or the bond coat 40 and the entire surface of the substrate 12 or the substrate 22. Instead, it is only necessary to release the adhesive bonds on the edge adhesive connection 34 or the peripheral region of the adhesive layer 40 in contact with the peripheral regions 18 and 28, so that a trenching takes place. Once separated, the surface of the first substrate 12 may then be rinsed clean with suitable solvents or any other wet or dry etching technique, as needed, to remove the remaining materials of the edge adhesive joint 34, the fill layer 32, or the bond layer 40, as appropriate ,
In another example, which serves to illustrate an application purpose, which is described in
10, with identical numbers used for identical parts, the ring clamp 42 is replaced by a flexible tensioning device 68 having a circumference. The flexible tensioner may provide adequate pulling force to secure the second substrate 22 during subsequent steps. This flexible jig 68 could apply vacuum force, electrostatic force, or any other suitable means that would provide adequate force while providing support to the second substrate 22 without causing damage while still allowing it to flex to generate the pull-off movement. Suitable materials for the flexible chuck 68 include those selected from the group consisting of silicones, polyimides, polyamides, olefins, fluoropolymers, nitriles, other rubbers, and any other flexible materials. As with the ferrule embodiment, an adhesive sheet 66 could also be used to support the first substrate 12 in the stack, as shown in FIG. In both embodiments, a force is then applied to a portion of the circumference of the flexible fixture 68, thereby lifting the corresponding portion of the circumference of the second substrate 22 and removing it from the stack 10 in a peel-off motion, as described. Again, the actual location of the initial separation between materials in the peripheral region 28 and the central region 30 of the substrate 22 depends on the materials used and the location of the surface treatment (if applicable), the filler layer 32, the edge adhesive joint 34, and / or the bond coat 40 from. The first substrate 12 can then be rinsed clean with suitable solvents, as needed, to remove the remaining materials of the edge adhesive joint 34, the filler layer 32, or the bond coat 40, where applicable. Advantageously, when the first substrate 12 is a building block wafer, no mechanical force or stress is applied to the building block wafer in the inventive separation process, thereby minimizing the risk of breakage or damage to the wafer during the separation.
In yet another example, which serves to illustrate an application purpose shown in Figure 12, the ring clamp 42 is replaced with an adhesive sheet 70 which can provide adequate pulling force to secure the second substrate 22 during subsequent steps. This adhesive film 70 could consist of a variety of substrates and adhesives of high bond strength to low bond strength and a variety of support forces that can provide adequate holding force to overcome the binding forces generated in the central region 30 and peripheral region 28 it provides limited support to the second substrate 22 without causing damage, while still allowing it to flex to produce the pull-off motion. Preferred materials for the adhesive film 70 include polyvinyl chloride, polyethylene, polyolefin, and combinations thereof. The adhesive film 70 preferably has a thickness of from about 0.01 to about 3 mm, more preferably from about 0.05 to about 1 mm, and even more preferably from about 0.07 to about 0.2 mm. As with the ferrule embodiment, an adhesive sheet 66 could also be used to support the first substrate 12 in the stack, as shown in FIG. In both embodiments, a force is applied to a portion of the periphery of the adhesive sheet 70 to lift the corresponding portion of the periphery of the second substrate 22, thereby removing it from the stack 10 in a peel-off motion, as described. Again, the actual location of the initial separation between materials in the peripheral region 28 and the central region 30 of the substrate will depend on the materials used and the location of the surface treatment (if applicable), the filler layer 32, the edge bond 34, and / or the bond coat 40.
While the above describes the primary method of practicing the present invention, there are several alternative embodiments of the invention. For example, the above embodiments described the first substrate 12 as a device wafer and the second substrate 22 as a carrier substrate. It is also acceptable that the first substrate 12 is the carrier substrate and the second substrate 22 is the package wafer. In this case, the front surface 14 of the first substrate 12 will not be a building block surface, but instead will be a support surface. In addition, the surface 24 of the second substrate 22 will not be a support surface, but instead will be a package surface. In other words, the filling layer 32 can be applied to the support instead of the building block wafer, or the surface treatment 38 can be carried out on the building block wafer instead of the support, the same quality of the stack structure 10 being formed during the subsequent bonding step. In addition, although the embodiments of Figs. 7-13 illustrate the stack 10 with the edge adhesive bond 34 removed or the peripheral portion of the bond coat 40 removed, the edge bond 34 or peripheral portion of the bond coat 40 need not be removed prior to performing the wafer separation the.
Furthermore, instead of the sequential application of the filling layer 32, the edge adhesive connection 34, the surface modification 38 and / or the bonding layer 40 to the same substrate 12, it is also expedient to fill the layer 32, the edge adhesive connection 34, the surface modification 38 and / or the bonding layer 40 on the first substrate 12 and the other of the filling layer 32, the edge adhesive connection 34, the Oberflächenmodifikati¬on 38 and / or the bonding layer 40 on the second substrate 22 to apply. The first and second substrates 12, 22 could then be compressed face to face under heat and / or pressure, as described above, to bond the two.
Finally, while it is preferred in some embodiments that the fill layer 32 does not form strong adhesive bonds with the package surface 14 or the carrier surface 24, in other embodiments it may be desirable to formulate the filler layer 32 such that it has only one the block surface 14 and the support surface 24 does not form strong adhesive connections. As was the case with the previously discussed embodiments, the substrates 12 and 22 could be reversed so that the first substrate 12 would be the carrier substrate and the second substrate 22 would be the package wafer. Again, the front surface 14 of the first substrate 12 in this case will not be a building block surface, but instead will be a support surface. In addition, the surface 24 of the second substrate 22 will not be a support surface, but will instead be a device surface.
It will be appreciated that the mechanism for curing or curing these materials can be readily selected and adjusted by those of ordinary skill in the art. For example, in some embodiments, it may be desirable to use a non-curing composition for ease of dissolution in later removal and cleaning operations. For each of these materials, thermoplastic or rubbery compositions (typically having a weight average molecular weight of at least about 5,000 daltons), resin or rosin resinous compositions (typically having a weight average molecular weight of at least about 5,000 daltons) and mixtures of the above would be suitable.
It will be appreciated that the above may be used to produce a series of integrated micro-devices, including those consisting of the group consisting of silicon-based semiconductor devices, semiconductor-based devices, arrays of embedded passive devices (e.g. Resistors, capacitors, inductors), MEMS devices, microsensors, photonic devices, light-emitting diodes, thermal management devices, and planar encapsulation substrates (eg, interposers) to which one or more of the above devices has been or will be attached.
EXAMPLES
The following examples set forth preferred methods of the invention. It will be understood, however, that these examples are provided by way of illustration and should not be construed as limiting the scope of the invention as a whole. EXAMPLE 1 Separation of edge-bonded wafers with modified average surface under
Use of a Hand-Operated Puller with Removal of Bonding Material from the Outer Edge In this method, a wafer stack is made according to a method of the invention and then separated using a hand-operated peel-off separator. Prior to the two wafers sticking together, the average contact area of a wafer is chemically modified using a fluorinated silane solution to produce an adhesive strength differential across the wafer surface. A bonding material (WaferBOND® HT10.10, available from Brewer Science, Inc., Rolla, Mo., USA) was deposited on the surface of a 200 mm silicon wafer (Wafer 1) at the outer edge to form a very thin coating around the surface peripheral area of the wafer surface, which was about 2.5 mm wide and about 0.5 pm thick. A surface modifying composition was formed by reacting a fluorinated silane ((heptadecafluoro-1,1,2,2-tetrahydradecyl) trichlorosilane; Ge-lest Inc., Morrisville, PA, USA) using FC-40 solvent (perfluorocompound predominantly C12, sold under the name FLUORINERT®, obtained from AMS Materials LLC, Jacksonville, FL, USA) to a 1% solution. The resulting solution was spin-coated on the surface of wafer 1, followed by firing on a hot plate at 100 ° C for 1 minute. The wafer was then rinsed with additional FC-40 solvent in a rotary coater to remove unreacted silane from the middle surface and fired at 100 ° C for a further minute. The bonding material prevented the surface-modifying composition from contacting the edge of wafer 1, leaving it untreated while the center portion was being treated. The bonding material does not react with the silane being washed off during the rinsing step, and thus the surface of the bonding material also remains untreated. The bonding material was left on the edge of Wafer 1 for subsequent processing steps (i.e., it was not removed prior to gluing the wafers).
Next, the surface of another 200 mm silicon wafer (wafer 2) with the same bonding composition (WaferBOND® HT10.10) was coated by rotary coating to a layer having a thickness of about 15 μm. Wafer 2 was then fired at 110 ° C for 2 minutes, followed by 160 ° C for an additional 2 minutes. The coated wafers were then bonded face-to-face under vacuum in a heated vacuum and pressure chamber at 220 ° C and 15 psig for 3 minutes so that the bonding material on wafer 1 and the bonding material on wafer 2 merged together to form a bond ¬schicht to produce.
Next, to remove the peripheral edge of the bond coat, the bonded wafers were dipped into the remover of the bond material (WaferBOND® Remover, available from Brewer Science, Inc., Rolla, Mo., USA) for about 1 hour to form the bonding material to remove from the outer zone. The removal process is completed as soon as the removal process reaches the fluorinated silane coating in the middle of wafer 1. The removal time will vary depending on the thickness of the adhesive layer and can be determined empirically. In general, the thicker the adhesive layer, the faster the removal speed due to the larger interspace between the wafers, which allows for greater solvent contact. Advantageously, the treated center surface is also hydrophobic, so that the solvent will effectively stop wetting by the layer once it reaches the center. Ideally, complete removal of the edge portion of the bond layer occurs, but it is effective separation the wafer only needs to cleave the layer laterally around the edge of the bond coat (ie, create a gap). Consequently, a certain amount of adhesive residue on the peripheral edge of wafer 1 and wafer 2 is acceptable.
The resulting stacked wafers were then separated using a ferrule (see Fig. 5 (a)) with a handle attached to the free ends for hand-operated separation. Wafer 2 was held in place by a vacuum chuck and the retaining ring of the ring clamp was placed all around the periphery of wafer 1 with the ends of the ring clamped in close relation to provide uniform pressure around the edges of the wafer (ie, around the entire peripheral length of the wafer) ¬len, The handle attached to the ring clamp was then folded so that the free edge of the handle was lifted upwardly away from the transverse plane of the stack, causing the ring clamp to deflect, causing the edge of the wafer 1 to rise up and away from the wafer 2 a peeling movement was raised. After separation, the sole residue of the bond composition coating on wafer 1 was on the peripheral area (2.5 mm wide untreated surface) of wafer 1. There was no transfer of bond material to the treated center surface of wafer 1. The bond coating remained Wafer 2 in the middle, with residue at the peripheral area. Both wafers in this example could be considered as the device wafer or the carrier wafer. EXAMPLE 2 Separation of a Bonded Wafer Stack Using a Manual Peel Separator In this method, a wafer stack is made according to another method of the invention and then separated using a hand-operated peel-off separator. Prior to the two wafers sticking together, the average contact area of a silicon wafer is chemically modified using a fluorinated silane solution to produce a bond strength differential across the wafer surface. To modify the center surface of the wafer, the edge of the wafer was first masked using an epoxy-based photoresist coating (SU-8 2002, Microchem, Newton, MA, USA). The photoresist composition was discharged onto the outer edge surface of a 200 mm silicon wafer (wafer 1) to coat a peripheral annular portion of the wafer surface which was about 2.5 mm wide.
Next, a fluorinated silane ((heptadecafluoro-1,1,2,2-tetrahydradecyl) tri-chlorosilane; Gelest, Morrisville, PA, USA) was used using FC-40 solvent (perfluoroalkyl compound predominantly C12 , sold under the name FLUORINERT®, obtained from AMS Materials LLC, Jacksonville, Fl., USA) to a 1% solution. The thinned solution was applied to the surface of wafer 1 by spin coating. The wafer was fired on a hot plate at 100 ° C for 1 minute and then rinsed with FC-40 solvent in a spin coater, followed by firing at 100 ° C for an additional 1 minute. The epoxy-based photoresist mask was then removed using acetone in a rotary coater to expose the untreated edge of the wafer. Thus, only the central portion of the wafer 1 was treated with the fluorinated silane solution and made "anti-tack" while the edges of the wafer retained a bondable surface.
The surface of another 200 mm silicon wafer (wafer 2) was coated with a gluing composition (WaferBOND® HT10.10) by rotaion coating. This wafer was then baked at 110 ° C for 2 minutes followed by 160 ° C The coated wafers were then bonded face to face under vacuum in a heated vacuum and pressure chamber at 220 ° C and 15 psig for 3 minutes.
Next, the resulting stacked wafers were then separated using a ring clamp (see Fig. 5 (a)) with a handle attached to the free ends for hand-operated separation. In this process, the peripheral region of the adhesive composition is not removed prior to separation. Wafer 2 was held in place by a vacuum chuck and the retaining ring of the ring clamp was placed all around the circumference of wafer 1 with the ends of the ring clamped together to provide even pressure around the edges of the wafer (i.e., around the entire perimeter of the wafer). The handle attached to the ring clamp was then canted so that the free edge of the handle was lifted upwardly away from the transverse plane of the stack, causing the ring clamp to deflect, causing the edge of the wafer 1 to rise up and away from the wafer 2 was lifted in a pull-off motion. After separation, only about a 2.5 mm wide ring of the bond composition coating was transferred to the edge of the wafer 1 while the remainder of the bond composition remained on wafer 2. That is, the bond composition adhered only to the outer edge surface of the wafer 1 and did not adhere to the chemically treated center surface of wafer 1. Both wafers in this example could be considered as the device wafer or carrier wafer. EXAMPLE 3 Manually operated peel-off separator used to separate a wafer stack having a center contact surface coated with release material [00110] In this process, a wafer stack is produced according to another process of the invention and then again using a hand-operated Abziehtrennvor¬richtung separated. Prior to bonding the two wafers together, the central contact area of a wafer is coated with a release material to create an adhesive strength differential across the interface of the wafer surface and the middle layer. First, an epoxy-based negative photoresist (sold under the name SU-8 2010, obtained from Microchem) was spin-coated on the entire surface of a 200 mm glass wafer (wafer 1), followed by firing at 110 ° C for 2 minutes followed to effect solvent removal. A Teflon® AF solution (Teflon® AF2400 in FC-40, supplied by DuPont) was then spin-coated over the photoresist layer to produce an adhesion-repellent layer. Next, FC-40 solvent was delivered to the surface of the wafer at the outer edge to remove an approximately 1-3 mm wide portion of the Teflon® AF coating from the peripheral area of the wafer surface, followed by firing at 110 C. for 2 minutes to remove the solvent.
The wafer was then bonded face to face with a 200 mm silicon wafer blank (wafer 2) under vacuum in a heated vacuum and pressure chamber at 120 ° C and 10 psig for 3 minutes. During this step, the photoresist layer wraps around the Teflon® layer to fill in the gaps on the outer edge of the wafers where the Teflon® layer was removed at the top, thereby bonding it to the peripheral edge of the wafer 2. The bonded wafers were then exposed to broadband UV light from the outside of the glass wafer, followed by firing at 120 ° C for 2 minutes to crosslink and cure the SU-8-2010 coating.
The resulting stacked wafers were then separated using a ring clamp (see Fig. 5 (a)) with a handle attached to the free ends for hand-operated separation. Wafer 2 was held in place by a vacuum chuck and the ring clamp retaining ring was placed all around the periphery of wafer 1 with the ends of the ring clamped together to provide even pressure around the edges of the wafer (ie, around the entire perimeter of the wafer) the ring clamp mounted handle was then raised, causing the ring clamp to deflect, lifting the edge of the wafer 1 up and away from the wafer 2 in a pull-away motion as described in Example 1. In this method, the peripheral area of the bond composition is not removed before separation. Instead, the photoresist layer is laterally cleaved at the initial separation point as a natural consequence of the ring clamp deflection movement such that a portion of the photoresist material remained on the glass wafer (wafer 1) while the portion of the layer was transferred to the silicon wafer (wafer 2) in the untreated area. After separation, wafer 2 had only one ring of material on the outer 1-3 mm while there was no material transfer in the central region of the wafer that had been in contact with wafer 1 Teflon® release liner. Both wafers in this example could be considered the device wafer or the carrier wafer. EXAMPLE 4 Manually operated peel-off separator used to separate a wafer stack having a mediocre surface filled with a low adhesion material to both substrates. [00114] In this method, a wafer stack according to another method of the invention is used made and then separated again using a hand-operated Abziehtrennvor¬ device. Prior to the two wafers sticking together, the central contact area of a wafer is coated with a release material to create an adhesive strength differential across the wafer surface. The Teflon® AF solution used in Example 3 was spin-coated on the surface of a 200 mm silicon wafer (wafer 1) to form a coating having a thickness of about 10 μm. Next, FC-40 solvent was delivered to the surface of the wafer at the outside edge to remove an approximately 3-5 mm wide portion of the Teflon® AF coating from the wafer surface. The wafer was then fired at 110 ° C for 2 minutes. Next, the edge of the wafer with WaferBOND® HT10.10 bond composition was applied by rotatory coating, the material being dispensed only at the edge to form a layer of bonding material around the peripheral area of the wafer surface, about 3-5 mm wide and about 10 pm thick. Thus, the Teflon® coating and the bonding material formed a single, uneven layer of material across the wafer surface. The wafer was then bonded face to face with a 200 mm silicon wafer blank (wafer 2) under vacuum in a heated vacuum and pressure chamber at 220 ° C and 10 psig for 2 minutes.
The resulting stacked wafers were then separated using a ferrule (see Fig. 5 (a)) with a handle attached to the free ends for manual separation. Wafer 2 was held in place by a vacuum chuck and the ring clamp retaining ring was placed all around the periphery of wafer 1 with the ends of the ring clamped together to provide even pressure around the edges of the wafer (ie, around the entire perimeter of the wafer) the ring clamp mounted handle was then raised, causing the ring clamp to deflect, lifting the edge of the wafer 1 up and away from the wafer 2 in a pull-away motion as described in Example 1. In this method, the peripheral area of the bond composition is not removed before separation. After the separation, the wafer 2 had only one ring of the bonding material on the outer 3-5 mm while there was no material transfer in the middle. Wafer 1 had a ring of bonding material on the outer 3 -5 mm and the Teflon® AF coating remained in the middle. The bonding material had been split by its cross section and split between the two wafers. Both wafers in this example could be considered as the device wafer or the carrier wafer.

权利要求:
Claims (23)
[1]
Claims 1. A ring clamp for separating bonded substrates, the ring clamp having a flexible, planar body having a substantially circular profile and a central opening, the body comprising: an annular inner sidewall; an annular outer sidewall; an upper surface extending between the inner side wall and the outer side wall; a wafer engagement surface extending outwardly from the inner sidewall, the wafer engagement surface terminating at a point in the body that is spaced from the outer sidewall; and an inwardly extending annular ridge extending inwardly from the point and sloping away from the wafer engaging surface, the wafer engaging surface and the annular ridge forming an annular wafer receiving groove.
[2]
2. Ring clamp according to claim 1, wherein it is the body to a uniform ausgebil¬dete split ring clamp with two free ends.
[3]
The ring clamp of claim 1, wherein the annular ridge terminates in a free edge and has an inclined shoulder surface extending between the free edge and the point at which the wafer engaging surface terminates in the body.
[4]
4. Ring clamp according to claim 3, wherein the groove has an angle (Θ), as measured from the Wafereingriffs¬ surface to the shoulder surface of the ridge, from about 10 ° to about 90 °.
[5]
The ring clamp of claim 3, wherein the free edge of the annular ridge does not extend inwardly past a plane defined by the inner sidewall such that the annular ridge is offset outwardly from the inner sidewall.
[6]
6. Ring clamp according to claim 1, wherein the body comprises a plurality of parts, wherein each part is formed uniformly.
[7]
The ring clamp of claim 1, wherein the body is made of a material selected from the group consisting of metals, ceramics, polymers, composites, and combinations thereof.
[8]
The ring clamp of claim 1, wherein the body has a width "W" as measured from the inside sidewall to the outside sidewall of from about 0.1 to about 50 mm.
[9]
The ring clamp of claim 1, wherein the inside wall has a thickness " t " from about 0.1 to about 15 mm.
[10]
The ring clamp of claim 1, wherein the inside wall has a thickness " T " from about 0.15 to about 16 mm.
[11]
11. A combination of: a clamp having a flexible, planar body with a substantially circular profile, said body comprising an annular wafer receiving groove; anda planar substrate having an outermost edge defining the periphery of the substrate, wherein at least a portion of the periphery is received in the wafer receiving groove.
[12]
The combination of claim 11, wherein the clamp further comprises: a central opening; an annular inner side wall; an annular outer side wall; an upper surface extending between the inner side wall and the outer side wall; a wafer engagement surface extending outwardly from the inner sidewall and terminating at a point in the body spaced from the outer sidewall; and an inwardly extending annular ridge that slopes inwardly from the point in and away from the wafer engaging surface, wherein the wafer engaging surface and the annular ridge collectively form the annular wafer receiving groove.
[13]
The combination of claim 12, wherein the substrate further comprises a front surface and a back surface, the front surface comprising a central portion and a peripheral portion.
[14]
14. The combination of claim 13, wherein the annular ridge terminates in a free edge, the annular ridge having an inclined shoulder surface extending between the free edge of the ridge and the point at which the wafer engaging surface terminates in the body, the back surface of the ridge Substrate is detected by the wafer engaging surface of the body and the outermost edge and the peripheral region of the substrate are detected by the shoulder and the free edge of the ridge.
[15]
The combination of claim 12, wherein the substrate comprises a material selected from the group consisting of silicon, sapphire, quartz, metal, glass and ceramics.
[16]
16. A method of temporary bonding, comprising: providing a stack comprising: a first substrate having a back surface and a brick surface, the brick surface having a peripheral region and a central region; a second substrate bonded to the first substrate, the second substrate having a support surface, a back surface, and an outermost edge defining the periphery of the second substrate, the support surface having a peripheral region and a central region; and separating the first and second substrates separately by applying a force to a portion of the circumference of the second substrate, causing the second substrate to bend at an angle away from the stack, thereby separating the first substrate and the second substrate, wherein the severing is performed using a ring clamp having a planar body with a substantially circular profile defining the circumference of the ring clamp and a central opening, the ring clamp being secured about the circumference of the second substrate and having the force on only one part the periphery of the ring clamp is exerted, whereby the corresponding part of the circumference of the second substrate is lifted away from the stack in a peel-off movement.
[17]
17. The method of claim 16, wherein the body comprises: an annular inner sidewall; an annular outer side wall; an upper surface extending between the inner side wall and the outer side wall; a wafer engagement surface extending outwardly from the inner sidewall, the wafer engagement surface terminating at a point in the body that is spaced from the outer sidewall; and an inwardly extending annular ridge tapering from the point and sloping away from the wafer engaging surface, wherein the wafer engaging surface and the annular ridge collectively form an annular wafer receiving groove, wherein at least a portion of the periphery of the second substrate is received in the groove ,
[18]
The method of claim 17, wherein the body is in the form of a split ring clamp having two free ends.
[19]
19. The method of claim 18, wherein the ring clamp is secured around the circumference of the second substrate by: moving the free ends away from one another, thereby enlarging the central opening of the body; Placing the ring clamp around the circumference of the second substrate and pulling the free ends together prior to separation to compressively engage the second substrate, the annular ridge of the ring clamp terminating in a free edge and having an inclined shoulder surface extending between the free edge Edge of the ridge and the point at which the wafer engaging surface terminates in the body, wherein the back surface of the second substrate is detected by the wafer engaging surface of the body and the outermost edge and the peripheral region of the second substrate from the shoulder and the free edge of the ridge.
[20]
20. The method of claim 19, wherein the ring clamp engages at least about 1 ° of the circumference of the second substrate.
[21]
21. The method of claim 17, wherein the ring clamp does not contact the first substrate.
[22]
A disc-shaped clip for separating bonded substrates, the clip comprising a solid, planar body having a substantially circular profile, the body comprising: an annular outer sidewall defining the outer diameter of the body; an upper surface extending across the entire diameter extending between the Außenseiten¬ wall; a wafer engagement surface extending from a point in the body spaced from the outer sidewall; and an inwardly extending annular ridge tapering from the point and sloping away from the wafer engaging surface, wherein the wafer engaging surface and the annular ridge collectively form an annular wafer receiving groove.
[23]
23. A ring clamp for separating bonded substrates, the ring clamp having a planar body having a substantially circular profile and a central opening, the body being a unitarily formed split ring clamp having two free ends and comprising: an annular inner side wall; an annular outer side wall; an upper surface extending between the inner side wall and the outer side wall; a wafer engagement surface extending outwardly from the inner sidewall, the wafer engagement surface terminating at a point in the body that is spaced from the outer sidewall; and an inwardly extending annular ridge extending inwardly from the point and sloping away from the wafer engaging surface, the wafer engaging surface and the annular ridge forming an annular wafer receiving groove. For this 11 sheets of drawings

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法律状态:
2020-10-15| MK07| Expiry|Effective date: 20200831 |

优先权:

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申请号 | 申请日 | 专利标题

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US12/819,680|US8852391B2|2010-06-21|2010-06-21|Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate|

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